PART |
Description |
Maker |
NESG2107M33-T3-A NESG2107M33 NESG2107M33-A |
NECs NPN SILICON TRANSISTOR
|
CEL[California Eastern Labs]
|
NE851M03 NE851M03-T1-A |
NECs NPN SILICON TRANSISTOR
|
California Eastern Labs
|
NE687M03-T1-A |
NECs NPN SILICON TRANSISTOR
|
California Eastern Laboratories Duracell
|
NE687M03-T1-A NE687M03 NE687M03-A |
NECs NPN SILICON TRANSISTOR
|
CEL[California Eastern Labs]
|
UPA861TD-T3 UPA861TD |
NECs NPN SILICON RF TWIN TRANSISTOR
|
NEC Corp. NEC[NEC]
|
NE681M03-T1-A |
BREADBOARD COPPER CLAD 11.5X17,1 NECs NPN SILICON TRANSISTOR
|
Duracell California Eastern Laboratories California Eastern Labs
|
NESG210719 NESG210719-T1 |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
NEC[NEC]
|
2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3A条一(c)|43 3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC] NEC, Corp. NEC Corp.
|
NESG250134-T1-AZ NESG250134 NESG250134-AZ |
NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE)
|
CEL[California Eastern Labs]
|
2SD2655 2SD655 |
Silicon NPN Transistor Silicon NPN Epitaxial Planer Low Frequency Power Amplifier TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
|
Hitachi Semiconductor TOSHIBA[Toshiba Semiconductor] Rohm
|
2N5038 JAN2N5039 JANTXV2N5039 2N5039 JAN2N5038 JAN |
NPN HIGH POWER SILICON TRANSISTOR 20 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA NPN HIGH POWER SILICON TRANSISTOR 2 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3 From old datasheet system (JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR NPN Transistor
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|